2003. 2. 25
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SEMICONDUCTOR
TECHNICAL DATA
KTK211
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
Revision No : 2
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
High Forward Transfer Admittance.
: |y
fs
| =9mS(Typ.)
Extremely Low Reverse Transfer Capacitance.
: C
rss
=0.1pF(Typ.)
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. GATE
2. DRAIN
3. SOURCE
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Gate-Drain Voltage
V
GDO
-18
V
Gate Current
I
G
10
mA
Drain Power Dissipation
P
D
150
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Gate Leakage Current
I
GSS
V
GS
=-0.5V, V
DS
=0
-
-
-10
nA
Gate-Drain Breakdown Voltage
V
(BR)GDO
I
G
=-100 A
-18
-
-
V
Drain Current
I
DSS
(Note)
V
GS
=0, V
DS
=10V
1.0
-
15
mA
Gate-Source Cut-off Voltage
V
GS(OFF)
V
DS
=10V, I
D
=1 A
-0.4
-
-4.0
V
Foward Transfer Admittance
|y
fs
|
V
DS
=10V, V
GS
=0, f=1kHz
-
9
-
mS
Reverse Transfer Capacitance
C
rss
V
GD
=-10V, f=1MHz
-
0.10
0.15
pF
Power Gain
G
PS
V
DD
=10V, f=100MHz (Fig.)
-
18
-
dB
Noise Figure
NF
V
DD
=10V, f=100MHz (Fig.)
-
2.5
3.5
dB
Note : I
DSS
Classification O:1.0 3.0, Y:2.5 6.0,
GR(G):5.0 10.0, BL(B):9.0 15.0
I Rank
Type Name
Marking
Lot No.
K
DSS
2003. 2. 25
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KTK211
Revision No : 2
R =50
INPUT
g
10pF
20pF
L1
20pF
L2
10pF
OUTPUT
R =50
L
DD
V
D
S
G
L1 : 0.8mm Ag PLATED Cu WIRE , 3 TURNS , 10mm ID , 10mm LENGTH.
L1 : 0.8mm Ag PLATED Cu WIRE , 3.5 TURNS , 10mm ID , 10mm LENGTH.
0.005F
0.005F
RS
Fig. 100MHz G
PS
, NF TEST CIRCUIT
GROUP
R
S
( )
KTK211 - O
0
KTK211 - Y
18
5%
KTK211 - GR
100
5%
KTK211 - BL
200
5%
KTK211 is measured at each group by changing R
S
.
2003. 2. 25
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KTK211
Revision No : 2
300
100
30
10
y , y - f
FREQUENCY f (MHz)
10
30
100
300
0.1
is
INPUT,OUTPUT ADMITTANCE
0.1
4
4
0.5
4
0.02
is
os
os
1k
3k
10k
0.3
1
3
5
10
30
50
0.5
COMMON
SOURCE
V =10V
V =0
Ta=25 C
DS
GS
b
is
os
b
is
g
os
g
fs
FORWARD REVERSE TRANSFER
rs
FREQUENCY f (MHz)
rs
fs
y , y - f
1k
3k
5k
0.1
0.3
0.5
1
3
5
10
30
COMMON SOURCE
V =10V
V =0
Ta=25 C
DS
GS
g
fs
fs
b
rs
b
rs
g
DS
is
y - V
INPUT ADMITTANCE y (mS)
is
DRAIN-SOURCE VOLTAGE V (V)
DS
6
8
10
12
14
16
18
20
22
0.3
0.5
1
3
5
10
COMMON
SOURCE
f=100MHz
Ta=25 C
b
is
DS
I =5mA(I )
DSS
DSS
I =5mA(I )
DS
g
is
2
0.5
0.5
2
y - V
os
DS
os
OUTPUT ADMITTANCE y (mS)
DS
DRAIN-SOURCE VOLTAGE V (V)
6
8
10
12
14
16
18
20
22
0.05
0.1
0.3
0.5
1
3
5
10
COMMON
SOURCE
f=100MHz
Ta=25 C
os
b
DSS
I =5mA(I )
DS
2
0.5
g
os
DS
I =5mA(I )
DSS
2
0.5
y - V
fs
DS
fs
FORWARD TRANSFER ADMITTANCE
DS
DRAIN-SOURCE VOLTAGE V (V)
y (mS)
6
8
10
12
14
16
1
3
5
10
30
COMMON SOURCE
f=100MHz
Ta=25 C
fs
g
I =5mA
DS
DSS
(I )
(I )
DSS
DS
I =5mA
-b
fs
2
0.5
2
0.5
ADMITTANCE y , y (mS)
y , y (mS)
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